MARKING CODE @wiki
MARKING CODE @wiki

「TOSHIBA(2)」の編集履歴（バックアップ）一覧に戻る

TOSHIBA(2) - (2011/09/14 (水) 00:03:53) の編集履歴(バックアップ)

TOSHIBA(2)

　TOSHIBA(2)のマーキングコード一覧です。
　マーキングコードは同じでも製品型番が異なるものもありますので外形、特性などをデータシートで比べることをおすすめします。
　「*」,「**」,「***」,「****」にはロットNo.やデートコード,「#」,「_」などにはhFE、特性種別などにより各々の文字が入ります。詳しくは各データシートを参照してください。

　注意事項はTOSHIBAを参照して下さい。

マーキングコードリスト

LIST TOSHIBA(1)
LIST TOSHIBA(2)
LIST TOSHIBA(3)
LIST TOSHIBA(4)


TOSHIBAのリスト説明ページ(TOSHIBA TOP MENU)
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MARKING CODE LIST TOSHIBA(2)

* , ** , *** , ****,_=date code,Lot No. etc.
#=hfe rank.


MARKING
CODE		 PART No.
Grade etc.		 MAKER PACKAGE
NAME		 MAKER
PACKAGE NAME		 PIN
COUNT		 etc.
G3 1SS196 TOSHIBA SC-59
TO-236MOD		 1-3G1A
S-Mini(2.9 x 2.5)		 3 Si Diode for Ultra High-Speed Switching Applications.
G3
 TC7SET02FU TOSHIBA SC-88A
SOT-353		 USV(2.1 x 2.1)
SSOP5-P-0.65A)		 5 2-input NOR gate.
G3 TC7SET02F TOSHIBA SC-74A
SOT-25		 SMV(2.9 x 2.8)
SSOP5-P-0.95)		 5 2-input NOR gate.
G*O
or
(GO)		 2SC2883
Grade O(100~200)		 TOSHIBA SC-62 PW-Mini(4.6 x 4.2)
(2-5K1A)		 4 Bipolar NPN transistor for low power amp/audio frequency amp.
Complementary to 2SA1203.
Discontinued.
G*|O
or
(G|O)		 2SC2883
Grade O(100~200)		 TOSHIBA SC-62 PW-Mini(4.6 x 4.2)
(2-5K1A)		 4 Bipolar NPN transistor for low power amp/audio frequency amp.
Pb free.
Complementary to 2SA1203.
Discontinued.
G*Y
or
(GY)
 2SC2883
Grade Y(160~320)		 TOSHIBA SC-62 PW-Mini(4.6 x 4.2)
(2-5K1A)		 4 Bipolar NPN transistor for low power amp/audio frequency amp.
Complementary to 2SA1203.
Discontinued.
G*|Y
or
(G|Y)		 2SC2883
Grade Y(160~320)		 TOSHIBA SC-62 PW-Mini(4.6 x 4.2)
(2-5K1A)		 4 Bipolar NPN transistor for low power amp/audio frequency amp.
Pb free.
Complementary to 2SA1203.
Discontinued.
GT8G132
***
 GT8G132 TOSHIBA - SOP-8
(2-6J1C)		 8 IGBT for strobe flash application.
GT8G132
***
 GT8G132 TOSHIBA - SOP-8
(2-6J1C)		 8 IGBT for strobe flash application.
Pb free.
H9 1SS344 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(1-3G1B)		 3 Schottky barrier diode for ultra high speed switching.
Discontinued.
HA
 TC7SH14FU TOSHIBA SC-88A
SOT-353		 USV(2.1 x 2.1)
SSOP5-P-0.65A)		 5 Schmitt inverter gate.
HA TC7SH14F TOSHIBA SC-74A
SOT-25		 SMV(2.9 x 2.8)
SSOP5-P-0.95)		 5 Schmitt inverter gate.
I9 1SS336 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(1-3G1E)		 3 Switching diode for ultra high speed switching.
J9 1SS337 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(1-3G1F)		 3 Switching diode for ultra high speed switching.
JJ1
 SSM3J108TU TOSHIBA - UFM(2.0 x 2.1)
(2-2U1A)		 3 P-ch MOS FET for high speed switching application.
JJ2
 SSM3J109TU TOSHIBA - UFM(2.0 x 2.1)
(2-2U1A)		 3 P-ch MOS FET for high speed switching application.
JJ3
 SSM3J110TU TOSHIBA - UFM(2.0 x 2.1)
(2-2U1A)		 3 P-ch MOS FET for high speed switching application.
JJ7
 SSM3J114TU TOSHIBA - UFM(2.0 x 2.1)
(2-2U1A)		 3 P-ch MOS FET for high speed switching application.
JJ8
 SSM3J115TU TOSHIBA - UFM(2.0 x 2.1)
(2-2U1A)		 3 P-ch MOS FET for high speed switching application.
JJB
 SSM3J120TU TOSHIBA - UFM(2.0 x 2.1)
(2-2U1A)		 3 P-ch MOS FET for power management switch application.
JJC
 SSM3J130TU TOSHIBA - UFM(2.0 x 2.1)
(2-2U1A)		 3 P-ch MOS FET for power management switch application.
JJE
 SSM3J129TU TOSHIBA - UFM(2.0 x 2.1)
(2-2U1A)		 3 P-ch MOS FET for power management switch application.
JJK
 SSM3J132TU TOSHIBA - UFM(2.0 x 2.1)
(2-2U1A)		 3 P-ch MOS FET for power management switch application.
JJL
 SSM3J133TU TOSHIBA - UFM(2.0 x 2.1)
(2-2U1A)		 3 P-ch MOS FET for power management switch application.
JJM
 SSM3J134TU TOSHIBA - UFM(2.0 x 2.1)
(2-2U1A)		 3 P-ch MOS FET for power management switch application.
JJN
 SSM3J135TU TOSHIBA - UFM(2.0 x 2.1)
(2-2U1A)		 3 P-ch MOS FET for power management switch application.
K9 1SS348 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(1-3G1B)		 3 Schottky barrier diode for low voltage high speed switching.
Discontinued.
K11
 SSM6J409TU TOSHIBA - UF6(2.0 x 2.1)
(2-2T1D)		 6 P-ch MOS FET for power management application.
KDL SSM3J14T TOSHIBA - TSM(2.9 x 2.8)
(2-3S1A)		 3 P-ch MOS FET for power management switch.
DC-DC converter.
KFG SSM3J327R TOSHIBA -
SOT-23F		 (2-3Z1A) 3 P-ch MOS FET for power management switch application.
KFH SSM3J328R TOSHIBA -
SOT-23F		 (2-3Z1A) 3 P-ch MOS FET for power management switch application.
KFJ SSM3J332R TOSHIBA -
SOT-23F		 (2-3Z1A) 3 P-ch MOS FET for power management switch application.
KFL SSM3J334R TOSHIBA -
SOT-23F		 (2-3Z1A) 3 P-ch MOS FET for power management switch application.
KPH
 SSM6J412TU TOSHIBA - UF6(2.0 x 2.1)
(2-2T1D)		 6 P-ch MOS FET for power management application.
LG 2SC2712
Grade GR(200~400)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar NPN small signal transistor for low frequency amp.
Complementary to 2SA1162.
LL 2SC2712
Grade BL(350~700)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar NPN small signal transistor for low frequency amp.
Complementary to 2SA1162.
LO 2SC2712
Grade O(70~140)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar NPN small signal transistor for low frequency amp.
Complementary to 2SA1162.
LY
 2SC2712
Grade Y(120~240)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar NPN small signal transistor for low frequency amp.
Complementary to 2SA1162.
M*O
or
(MO)		 2SC2873
Grade O(70~140)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for power amp/switching.
Discontinued.
Complementary to 2SA1213.
M*|O
or
(M|O)		 2SC2873
Grade O(70~140)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for power amp/switching.
Pb free.
Discontinued.
Complementary to 2SA1213.
M*Y
or
(MY)
 2SC2873
Grade Y(120~240)		 TOSHIBA SC-62 PW-Mini(4.6 x 4.2)
(2-5K1A)		 4 Bipolar NPN transistor for power amp/switching.
Discontinued.

Complementary to 2SA1213.
M*|Y
or
(M|Y)		 2SC2873
Grade Y(120~240)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for power amp/switching.
Pb free.
Discontinued.
Complementary to 2SA1213.
N9 1SS372 TOSHIBA SC-70
SOT-323		 USM(2.0 x 2.1)
(1-2P1C)		 3 Schottky barrier diode for high speed switching.
N9 1SS374 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(1-3G1G)		 3 Schottky barrier diode for high speed switching.
N*O
or
(NO)		 2SA1213
Grade O(70~140)		 TOSHIBA SC-62 2-5K1A
PW-Mini(4.6 x 4.2)		 3(4) Si PNP Transistor for Power Applications
Switching
Complementary to 2SC2873.
N*|O
or
(N|O)		 2SA1213
Grade O(70~140)		 TOSHIBA SC-62 2-5K1A
PW-Mini(4.6 x 4.2)		 3(4) Si PNP Transistor for Power Applications
Switching
Complementary to 2SC2873.
Pb free.
N*Y
or
(NY)		 2SA1213
Grade Y(120~240)		 TOSHIBA SC-62 2-5K1A
PW-Mini(4.6 x 4.2)		 3(4) Si PNP Transistor for Power Applications
Switching
Complementary to 2SC2873.
N*|Y
or
(N|Y)		 2SA1213
Grade Y(120~240)		 TOSHIBA SC-62 2-5K1A
PW-Mini(4.6 x 4.2)		 3(4) Si PNP Transistor for Power Applications
Switching
Complementary to 2SC2873.
Pb free.
O9 1SS385FV TOSHIBA - VESM(1.2 x 1.2)
(1-1Q1A)		 3 Schottky barrier diode for high speed switching.
P9 1SS412 TOSHIBA SC-70
SOT-323		 USM(2.0 x 2.1)
(1-2P1C)		 3 Schottky barrier diode for general purpose rectifirer.
PQ
 SSM6J212FE TOSHIBA - ES6(1.6 x 1.6)
(2-2N1J)		 6 P-ch MOS FET for power management application.
PS
 SSM6J213FE TOSHIBA - ES6(1.6 x 1.6)
(2-2N1J)		 6 P-ch MOS FET for power management application.
PT
 SSM6J214FE TOSHIBA - ES6(1.6 x 1.6)
(2-2N1J)		 6 P-ch MOS FET for power management application.
PX SSM3J36MFV TOSHIBA - VESM(1.2 x 1.2)
(2-1L1B)		 3 P-ch MOS FET for power management switch applications.
PY SSM3J56MFV TOSHIBA - VESM(1.2 x 1.2)
(2-1L1B)		 3 P-ch MOS FET for load switching application.
PZ SSM3J35FS TOSHIBA - SSM(1.6 x 1.6)
(2-2H1B)		 3 P-ch MOS FET for high speed switching.
PZ SSM3J35MFV TOSHIBA - VESM(1.2 x 1.2)
(2-1L1B)		 3 P-ch MOS FET for high speed switching.
PZ SSM3J35MFV TOSHIBA - VESM(1.2 x 1.2)
(2-1L1B)		 3 P-ch MOS FET for high speed switching.
P*|O
or
(P|O)		 2SC2884
Grade O(100~200)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for low power amp/audio frequency amp.
Pb free.
Complementary to 2SA1204.
P*O
or
(PO)		 2SC2884
Grade O(100~200)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for low frequency amp.
Complementary to 2SA1204.
P*|Y
or
(P|Y)		 2SC2884
Grade Y(160~320)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for low power amp/audio frequency amp.
Pb free.
Complementary to 2SA1204.
P*Y
or
(PY)		 2SC2884
Grade Y(160~320)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for low frequency amp.
Complementary to 2SA1204.
QO 2SC2714
Grade O(70~140)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar NPN transistor for FM band high frequency amp.
QR 2SC2714
Grade R(40~80)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar NPN transistor for FM band high frequency amp.
QY 2SC2714
Grade Y(100~200)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar NPN transistor for FM band high frequency amp.
R9 1SS392 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(1-3G1F)		 3 Schottky barrier diode for low voltage high speed switching.
R9 1SS393 TOSHIBA SC-70
SOT-323		 USM(2.0 x 2.1)
(1-2P1B)		 3 Schottky barrier diode for low voltage high speed switching.
RO 2SC2715
Grade O(70~140)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar NPN transistor for high frequency AM/FM convert.
Discontinued.
RR 2SC2715
Grade R(40~80)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar NPN transistor for high frequency AM/FM convert.
Discontinued.
RY 2SC2715
Grade Y(120~240)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar NPN transistor for high frequency AM/FM convert.
Discontinued.
S3 1SS357 TOSHIBA - USC(1.25 x 2.5)
1-1E1A)		 2 Schottky barrier diode for ultra high speed switching.
S3 1SS388 TOSHIBA - ESC(0.8 x 1.6)
(1-1G1A)		 2 Schottky barrier diode for ultra switching.
S4 1SS367 TOSHIBA - USC(1.25 x 2.5)
1-1E1A)		 2 Schottky barrier diode for high speed switching.
S4 1SS389 TOSHIBA - ESC(0.8 x 1.6)
(1-1G1A)		 2 Schottky barrier diode for high speed switching.
S5 1SS404 TOSHIBA - USC(1.25 x 2.5)
1-1E1A)		 2 Schottky barrier diode for high speed switching.
S6 1SS420 TOSHIBA - ESC(0.8 x 1.6)
(1-1G1A)		 2 Schottky barrier diode for high speed switching.
S8 1SS424 TOSHIBA - ESC(0.8 x 1.6)
(1-1G1A)		 2 Schottky barrier diode for high speed switching.
S9 1SS394 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(1-3G1B)		 3 Schottky barrier diode for high speed switching.
S9 1SS395 TOSHIBA SC-70
SOT-323		 USM(2.0 x 2.1)
(1-2P1D)		 3 Schottky barrier diode for high speed switching.
SG
 U1GWJ49 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(3-5E1A)		 3(4) Schottky barrier diode for high speed rectification.
SG 2SA1162
Grade GR(200~400)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar PNP small signal transistor for low frequency amp.
Complementary to 2SC2712.
SO 2SA1162
Grade O(70~140)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar PNP small signal transistor for low frequency amp.
Complementary to 2SC2712.
SY
 2SA1162
Grade Y (120~240)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar PNP small signal transistor for low frequency amp.
Complementary to 2SC2712.
S*|A
or
(S|A)		 2SC2982
Grade A(140~240)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for middle power amp/strobe flash.
Pb free.
Discontinued.
Complementary to 2SA1314.
S*A
or
(SA)		 2SC2982
Grade A(140~240)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for middle power amp/strobe flash.
Discontinued.
Complementary to 2SA1314.
S*|B
or
(S|B)		 2SC2982
Grade B(200~330)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for middle power amp/strobe flash.
Pb free.
Discontinued.
Complementary to 2SA1314.
S*B
or
(SB)		 2SC2982
Grade B(200~330)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for middle power amp/strobe flash.
Discontinued.
Complementary to 2SA1314.
S*|C
or
(S|C)		 2SC2982
Grade C(300~450)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for middle power amp/strobe flash.
Pb free.
Discontinued.
Complementary to 2SA1314.
S*C
or
(SC)		 2SC2982
Grade C(300~450)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for middle power amp/strobe flash.
Discontinued.
Complementary to 2SA1314.
S*|D
or
(S|D)		 2SC2982
Grade D(420~600)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for middle power amp/strobe flash.
Pb free.
Discontinued.
Complementary to 2SA1314.
S*D
or
(SD)		 2SC2982
Grade D(420~600)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for middle power amp/strobe flash.
Discontinued.
Complementary to 2SA1314.
SP1
***
 SSM6J501NU TOSHIBA - UDFN6B(2.0 x 2.0)
(2-2AA1A)		 6(8) P-ch MOS FET for power management application.
SP2
***
 SSM6J502NU TOSHIBA - UDFN6B(2.0 x 2.0)
(2-2AA1A)		 6(8) P-ch MOS FET for power management application.
SP3
***
 SSM6J503NU TOSHIBA - UDFN6B(2.0 x 2.0)
(2-2AA1A)		 6(8) P-ch MOS FET for power management application.
T5
Cathode band:Blue(青)
Body color:Tomato(赤橙)
Marking:Blue(青)

 1S1585 TOSHIBA SC-40 DO-35(1-2A1A) 2 Diode for high speed switching.
T6
Cathode band:Blue(青)
Body color:Tomato(赤橙)
Marking:Blue(青)
 1S1586 TOSHIBA SC-40 DO-35(1-2A1A) 2 Diode for high speed switching.
T7
Cathode band:Blue(青)
Body color:Tomato(赤橙)
Marking:Blue(青)
 1S1587 TOSHIBA SC-40 DO-35(1-2A1A) 2 Diode for high speed switching.
T9 1SS396 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(1-3G1G)		 3 Schottky barrier diode for low voltage high speed switching.
TA
 TA75S393F TOSHIBA SC-74A
SOT-25		 SMV
(SSOP5-P-0.95)		 5 SINGLE COMPARATOR
TPC8402
****
 TPC8402 TOSHIBA - SOP-8
(2-6J1E)		 8 N-ch MOS FET for Li-ion secondary battery,Notebook PCs,Portable equipment.
Discontinued?
TY 1SS381 TOSHIBA - ESC(0.8 x 1.6)
(1-1G1A)		 2 Diode for VHF tuner band switch.
U9 1SS422 TOSHIBA - SSM(1.6 x 1.6)
(1-2S1C)		 3 Schottky barrier diode for high speed switching.
V*|O
or
(V|O)		 2SC3803
Grade O(70~140)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for high speed high frequency switching/amp.
Pb free.
Discontinued.
Complementary to 2SA1483.
V*O
or
(VO)		 2SC3803
Grade O(70~140)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for high speed high frequency switching/amp.
Discontinued.
Complementary to 2SA1483.
V*|R
or
(V|R)		 2SC3803
Grade R(40~80)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for high speed high frequency switching/amp.
Pb free.
Discontinued.
Complementary to 2SA1483.
V*R
or
(VR)		 2SC3803
Grade R(40~80)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for high speed high frequency switching/amp.
Discontinued.
Complementary to 2SA1483.
V*|Y
or
(V|Y)		 2SC3803
Grade Y(120~240)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for high speed high frequency switching/amp.
Pb free.
Discontinued.
Complementary to 2SA1483.
V*Y
or
(VY)		 2SC3803
Grade Y(120~240)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for high speed high frequency switching/amp.
Discontinued.
Complementary to 2SA1483.
V 1SS427 TOSHIBA - fSC(0.6 x 1.0)
(1-1L1A)		 2 Diode for high speed switching.
V1 1SV160 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(1-3G1A)		 3 Variable capacitance diode for FM AFC receiver.
V3 1SV225 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(1-3G1F)		 3 PIN diode for FM band tuner.
V4 1SV228 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(1-3G1F)		 3 Variable capacitance diode for FM receiver electronic tuning.
W 1SS416 TOSHIBA - fSC(0.6 x 1.0)
(1-1L1A)		 2 Schottky barrier diode for high speed switching.
W 1SS416CT TOSHIBA - CST2(0.6 x 1.0)
(1-1P1A)		 2 Schottky barrier diode for high speed switching.
W 1SS418 TOSHIBA - sESC(0.6 x 1.4)
(1-1K1A)		 2 Schottky barrier diode for high speed switching.
W9 1SS423 TOSHIBA - SSM(1.6 x 1.6)
(1-2S1C)		 3 Schottky barrier diode for ultra high speed switching.
WB
125		 TC7WB125FK TOSHIBA SSOP-8 SSOP8-P-0.50A 5 DUAL BUS SWITCH.
WG 2SC2859
Grade GR(200~400)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar NPN small signal transistor for audio frequency low power amp.
WO 2SC2859
Grade O(70~140)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar NPN small signal transistor for audio frequency low power amp.
WY 2SC2859
Grade Y(120~240)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar NPN small signal transistor for audio frequency low power amp.
X 1SS417 TOSHIBA - fSC(0.6 x 1.0)
(1-1L1A)		 2 Schottky barrier diode for ultra high speed switching.
X 1SS417CT TOSHIBA - CST2(0.6 x 1.0)
(1-1P1A)		 2 Schottky barrier diode for ultra high speed switching.
X 1SS419 TOSHIBA - sESC(0.6 x 1.4)
(1-1K1A)		 2 Schottky barrier diode for high speed switching.
X9 1SS398 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(1-3G1G)		 3 Switching diode for high voltage switching.
Y 1SS413 TOSHIBA - fSC(0.6 x 1.0)
(1-1L1A)		 2 Schottky barrier diode for high speed switching.
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