MARKING CODE @wiki
MARKING CODE @wiki

TOSHIBA(2)

　TOSHIBA(2)のマーキングコード一覧です。
　マーキングコードは同じでも製品型番が異なるものもありますので外形、特性などをデータシートで比べることをおすすめします。
　「*」,「**」,「***」,「****」にはロットNo.やデートコード,「#」,「_」などにはhFE、特性種別などにより各々の文字が入ります。詳しくは各データシートを参照してください。

　注意事項はTOSHIBAを参照して下さい。

マーキングコードリスト

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MARKING CODE LIST TOSHIBA(2)

* , ** , *** , ****,_=date code,Lot No. etc.
#=hfe rank.


MARKING
CODE		 PART No.
Grade etc.		 MAKER PACKAGE
NAME		 MAKER
PACKAGE NAME		 PIN
COUNT		 etc.
G
**
Cathode Band color:Silver
 S5566G TOSHIBA -
DO-41SS		 (3-3E1A)
Plastic Axial mold package		 2 Fast Recoverey Diode.
IF=1A.
G1 CRG01 TOSHIBA - S-FLAT(1.6 x 3.5)
(3-2A1A)		 2 Diode for general purpose rectifier.
G2 CMG02 TOSHIBA - M-FLAT(2.4 x 4.7)
(3-4E1A)		 2 Diode for general purpose rectifier.
G2 CRG02 TOSHIBA - S-FLAT(1.6 x 3.5)
(3-2A1A)		 2 Diode for general purpose rectifier.
G3 CMG03 TOSHIBA - M-FLAT(2.4 x 4.7)
(3-4E1A)		 2 Diode for general purpose rectifier.
G3 CRG03 TOSHIBA - S-FLAT(1.6 x 3.5)
(3-2A1A)		 2 Diode for general purpose rectifier.
G3 1SS196 TOSHIBA SC-59
TO-236MOD		 1-3G1A
S-Mini(2.9 x 2.5)		 3 Si Diode for Ultra High-Speed Switching Applications.
G3
 TC7SET02FU TOSHIBA SC-88A
SOT-353		 USV(2.1 x 2.1)
SSOP5-P-0.65A)		 5 2-input NOR gate.
G3 TC7SET02F TOSHIBA SC-74A
SOT-25		 SMV(2.9 x 2.8)
SSOP5-P-0.95)		 5 2-input NOR gate.
G4 CRG04 TOSHIBA - S-FLAT(1.6 x 3.5)
(3-2A1A)		 2 Diode for general purpose rectifier.
G5 CMG05 TOSHIBA - M-FLAT(2.4 x 4.7)
(3-4E1A)		 2 Diode for general purpose rectifier.
G5 CRG05 TOSHIBA - S-FLAT(1.6 x 3.5)
(3-2A1A)		 2 Diode for general purpose rectifier.
G6 CMG06 TOSHIBA - M-FLAT(2.4 x 4.7)
(3-4E1A)		 2 Diode for general purpose rectifier.
G*|E
or
(G|E)		 TA78L15F TOSHIBA SC-62
SOT-89		 PW-Mini
(HSOP3-P-1.50)		 3(4) Low dropout voltage regulator +15V output
RoHS compatible.
Pb free.
G*E
or
(GE)		 TA78L15F TOSHIBA SC-62
SOT-89		 PW-Mini
(HSOP3-P-1.50)		 3(4) Low dropout voltage regulator +15V output
G*|J
or
(G|J)		 TA79L15F TOSHIBA SC-62
SOT-89		 PW-Mini
(HSOP3-P-1.50)		 3(4) Low dropout voltage regulator -15Voutput
RoHS compatible.
Pb free.
G*J
or
(GJ)		 TA79L15F TOSHIBA SC-62
SOT-89		 PW-Mini
(HSOP3-P-1.50)		 3(4) Low dropout voltage regulator -15Voutput
G*O
or
(GO)		 2SC2883
Grade O(100~200)		 TOSHIBA SC-62 PW-Mini(4.6 x 4.2)
(2-5K1A)		 4 Bipolar NPN transistor for low power amp/audio frequency amp.
Complementary to 2SA1203.
Discontinued.
G*|O
or
(G|O)		 2SC2883
Grade O(100~200)		 TOSHIBA SC-62 PW-Mini(4.6 x 4.2)
(2-5K1A)		 4 Bipolar NPN transistor for low power amp/audio frequency amp.
Pb free.
Complementary to 2SA1203.
Discontinued.
G*Y
or
(GY)
 2SC2883
Grade Y(160~320)		 TOSHIBA SC-62 PW-Mini(4.6 x 4.2)
(2-5K1A)		 4 Bipolar NPN transistor for low power amp/audio frequency amp.
Complementary to 2SA1203.
Discontinued.
G*|Y
or
(G|Y)		 2SC2883
Grade Y(160~320)		 TOSHIBA SC-62 PW-Mini(4.6 x 4.2)
(2-5K1A)		 4 Bipolar NPN transistor for low power amp/audio frequency amp.
Pb free.
Complementary to 2SA1203.
Discontinued.
GT8G132
***
 GT8G132 TOSHIBA - SOP-8
(2-6J1C)		 8 IGBT for strobe flash application.
GT8G132
***
 GT8G132 TOSHIBA - SOP-8
(2-6J1C)		 8 IGBT for strobe flash application.
Pb free.
H5 CMH05A TOSHIBA - M-FLAT(2.4 x 4.7)
(3-4E1A)		 2 High efficiency rectifier for switching mode power supply.
GWJ

**
 1GWJ43N TOSHIBA - 3-3F2A
 2 Schottky barrier diode for high speed rectifier applicatios
AXIAL Plastic Mold.
Discontinued.
GWJ
**
 1GWJ43N TOSHIBA - 3-3F2A
 2 Schottky barrier diode for high speed rectifier applicatios(Pb free).
AXIAL Plastic Mold.
Discontinued.
H9 1SS344 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(1-3G1B)		 3 Schottky barrier diode for ultra high speed switching.
Discontinued.
HA
 TC7SH14FU TOSHIBA SC-88A
SOT-353		 USV(2.1 x 2.1)
SSOP5-P-0.65A)		 5 Schmitt inverter gate.
HA TC7SH14F TOSHIBA SC-74A
SOT-25		 SMV(2.9 x 2.8)
SSOP5-P-0.95)		 5 Schmitt inverter gate.
H*|E
or
(H|E)		 TA78L18F TOSHIBA SC-62
SOT-89		 PW-Mini
(HSOP3-P-1.50)		 3(4) Low dropout voltage regulator +18V output
RoHS compatible.
Pb free.
H*E
or HE)		 TA78L18F TOSHIBA SC-62
SOT-89		 PW-Mini
(HSOP3-P-1.50)		 3(4) Low dropout voltage regulator +18V output
H*|J
or
(H|J)		 TA79L18F TOSHIBA SC-62
SOT-89		 PW-Mini
(HSOP3-P-1.50)		 3(4) Low dropout voltage regulator -18Voutput
RoHS compatible.
Pb free.
H*J
or
(HJ)		 TA79L18F TOSHIBA SC-62
SOT-89		 PW-Mini
(HSOP3-P-1.50)		 3(4) Low dropout voltage regulator -18Voutput
I9 1SS336 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(1-3G1E)		 3 Switching diode for ultra high speed switching.
I*|E
or
(I|E)		 TA78L20F TOSHIBA SC-62
SOT-89		 PW-Mini
(HSOP3-P-1.50)		 3(4) Low dropout voltage regulator +20V output
RoHS compatible.
Pb free.
I*E
or
(IE)		 TA78L20F TOSHIBA SC-62
SOT-89		 PW-Mini
(HSOP3-P-1.50)		 3(4) Low dropout voltage regulator +20V output
I*|J
or
(I|J)		 TA79L20F TOSHIBA SC-62
SOT-89		 PW-Mini
(HSOP3-P-1.50)		 3(4) Low dropout voltage regulator -20Voutput
RoHS compatible.
Pb free.
I*J
or
(IJ)		 TA79L20F TOSHIBA SC-62
SOT-89		 PW-Mini
(HSOP3-P-1.50)		 3(4) Low dropout voltage regulator -20Voutput
J
**
Cathode Band color:Silver
 S5566J TOSHIBA -
DO-41SS		 (3-3E1A)
Plastic Axial mold package		 2 Fast Recoverey Diode.
IF=1A.
J9 1SS337 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(1-3G1F)		 3 Switching diode for ultra high speed switching.
J*|E
or
(J|E)		 TA78L24F TOSHIBA SC-62
SOT-89		 PW-Mini
(HSOP3-P-1.50)		 3(4) Low dropout voltage regulator +24V output
RoHS compatible.
Pb free.
J*E
or
(JE)		 TA78L24F TOSHIBA SC-62
SOT-89		 PW-Mini
(HSOP3-P-1.50)		 3(4) Low dropout voltage regulator +24V output
J*|J
or
(J|J)		 TA79L24F TOSHIBA SC-62
SOT-89		 PW-Mini
(HSOP3-P-1.50)		 3(4) Low dropout voltage regulator -24Voutput
RoHS compatible.
Pb free.
J*J
or
(JJ)		 TA79L24F TOSHIBA SC-62
SOT-89		 PW-Mini
(HSOP3-P-1.50)		 3(4) Low dropout voltage regulator -24Voutput
JJ1
 SSM3J108TU TOSHIBA - UFM(2.0 x 2.1)
(2-2U1A)		 3 P-ch MOS FET for high speed switching application.
JJ2
 SSM3J109TU TOSHIBA - UFM(2.0 x 2.1)
(2-2U1A)		 3 P-ch MOS FET for high speed switching application.
JJ3
 SSM3J110TU TOSHIBA - UFM(2.0 x 2.1)
(2-2U1A)		 3 P-ch MOS FET for high speed switching application.
JJ7
 SSM3J114TU TOSHIBA - UFM(2.0 x 2.1)
(2-2U1A)		 3 P-ch MOS FET for high speed switching application.
JJ8
 SSM3J115TU TOSHIBA - UFM(2.0 x 2.1)
(2-2U1A)		 3 P-ch MOS FET for high speed switching application.
JJB
 SSM3J120TU TOSHIBA - UFM(2.0 x 2.1)
(2-2U1A)		 3 P-ch MOS FET for power management switch application.
JJC
 SSM3J130TU TOSHIBA - UFM(2.0 x 2.1)
(2-2U1A)		 3 P-ch MOS FET for power management switch application.
JJE
 SSM3J129TU TOSHIBA - UFM(2.0 x 2.1)
(2-2U1A)		 3 P-ch MOS FET for power management switch application.
JJK
 SSM3J132TU TOSHIBA - UFM(2.0 x 2.1)
(2-2U1A)		 3 P-ch MOS FET for power management switch application.
JJL
 SSM3J133TU TOSHIBA - UFM(2.0 x 2.1)
(2-2U1A)		 3 P-ch MOS FET for power management switch application.
JJM
 SSM3J134TU TOSHIBA - UFM(2.0 x 2.1)
(2-2U1A)		 3 P-ch MOS FET for power management switch application.
JJN
 SSM3J135TU TOSHIBA - UFM(2.0 x 2.1)
(2-2U1A)		 3 P-ch MOS FET for power management switch application.
K9 1SS348 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(1-3G1B)		 3 Schottky barrier diode for low voltage high speed switching.
Discontinued.
K11
 SSM6J409TU TOSHIBA - UF6(2.0 x 2.1)
(2-2T1D)		 6 P-ch MOS FET for power management application.
KDL SSM3J14T TOSHIBA - TSM(2.9 x 2.8)
(2-3S1A)		 3 P-ch MOS FET for power management switch.
DC-DC converter.
K*|E
or
(K|E)		 TA78L07F TOSHIBA SC-62
SOT-89		 PW-Mini
(HSOP3-P-1.50)		 3(4) Low dropout voltage regulator +7V output
RoHS compatible.
Pb free.
K*E
or
(KE)		 TA78L07F TOSHIBA SC-62
SOT-89		 PW-Mini
(HSOP3-P-1.50)		 3(4) Low dropout voltage regulator +7V output
KFG SSM3J327R TOSHIBA -
SOT-23F		 (2-3Z1A) 3 P-ch MOS FET for power management switch application.
KFH SSM3J328R TOSHIBA -
SOT-23F		 (2-3Z1A) 3 P-ch MOS FET for power management switch application.
KFJ SSM3J332R TOSHIBA -
SOT-23F		 (2-3Z1A) 3 P-ch MOS FET for power management switch application.
KFL SSM3J334R TOSHIBA -
SOT-23F		 (2-3Z1A) 3 P-ch MOS FET for power management switch application.
KPH
 SSM6J412TU TOSHIBA - UF6(2.0 x 2.1)
(2-2T1D)		 6 P-ch MOS FET for power management application.
LG 2SC4207
Grade GR(200~400)		 TOSHIBA SC-74A SMV(2.9 x 2.8)
(2-3L1A)		 5 Bipolar NPN x2 transistor for low frequency general purpose amp..
Complementary to 2SA1618.
LG

 2SC2712
Grade GR(200~400)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar NPN small signal transistor for low frequency amp.
Complementary to 2SA1162.
LL 2SC2712
Grade BL(350~700)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar NPN small signal transistor for low frequency amp.
Complementary to 2SA1162.
LO 2SC2712
Grade O(70~140)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar NPN small signal transistor for low frequency amp.
Complementary to 2SA1162.
LY
 2SC2712
Grade Y(120~240)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar NPN small signal transistor for low frequency amp.
Complementary to 2SA1162.
MA

 2SC3011 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)
 3 Bipolar NPN small signal transistor for UHF~C BAND LOW NOISE AMPLIFIER APPLICATIONS.
M*O
or
(MO)		 2SC2873
Grade O(70~140)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for power amp/switching.
Discontinued.
Complementary to 2SA1213.
M*|O
or
(M|O)		 2SC2873
Grade O(70~140)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for power amp/switching.
Pb free.
Discontinued.
Complementary to 2SA1213.
M*Y
or
(MY)
 2SC2873
Grade Y(120~240)		 TOSHIBA SC-62 PW-Mini(4.6 x 4.2)
(2-5K1A)		 4 Bipolar NPN transistor for power amp/switching.
Discontinued.

Complementary to 2SA1213.
M*|Y
or
(M|Y)		 2SC2873
Grade Y(120~240)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for power amp/switching.
Pb free.
Discontinued.
Complementary to 2SA1213.
N
**
Cathode Band color:Silver
 S5566N TOSHIBA -
DO-41SS		 (3-3E1A)
Plastic Axial mold package		 2 Fast Recoverey Diode.
IF=1A.
N9 1SS372 TOSHIBA SC-70
SOT-323		 USM(2.0 x 2.1)
(1-2P1C)		 3 Schottky barrier diode for high speed switching.
N9 1SS374 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(1-3G1G)		 3 Schottky barrier diode for high speed switching.
N*O
or
(NO)		 2SA1213
Grade O(70~140)		 TOSHIBA SC-62 2-5K1A
PW-Mini(4.6 x 4.2)		 3(4) Si PNP Transistor for Power Applications
Switching
Complementary to 2SC2873.
N*|O
or
(N|O)		 2SA1213
Grade O(70~140)		 TOSHIBA SC-62 2-5K1A
PW-Mini(4.6 x 4.2)		 3(4) Si PNP Transistor for Power Applications
Switching
Complementary to 2SC2873.
Pb free.
N*Y
or
(NY)		 2SA1213
Grade Y(120~240)		 TOSHIBA SC-62 2-5K1A
PW-Mini(4.6 x 4.2)		 3(4) Si PNP Transistor for Power Applications
Switching
Complementary to 2SC2873.
N*|Y
or
(N|Y)		 2SA1213
Grade Y(120~240)		 TOSHIBA SC-62 2-5K1A
PW-Mini(4.6 x 4.2)		 3(4) Si PNP Transistor for Power Applications
Switching
Complementary to 2SC2873.
Pb free.
O9 1SS385FV TOSHIBA - VESM(1.2 x 1.2)
(1-1Q1A)		 3 Schottky barrier diode for high speed switching.
P9 1SS412 TOSHIBA SC-70
SOT-323		 USM(2.0 x 2.1)
(1-2P1C)		 3 Schottky barrier diode for general purpose rectifirer.
PP4
***
 SSM6P47NU TOSHIBA - UDFN6(2.0 x 2.0)
(2-2Y1A)		 6(8) P-ch MOS FET for power management application.
PP5
***
 SSM6P49NU TOSHIBA - UDFN6(2.0 x 2.0)
(2-1Y1A)		 6(8) P-ch MOS FET for power management application.
PQ
 SSM6J212FE TOSHIBA - ES6(1.6 x 1.6)
(2-2N1J)		 6 P-ch MOS FET for power management application.
PS
 SSM6J213FE TOSHIBA - ES6(1.6 x 1.6)
(2-2N1J)		 6 P-ch MOS FET for power management application.
PT
 SSM6J214FE TOSHIBA - ES6(1.6 x 1.6)
(2-2N1J)		 6 P-ch MOS FET for power management application.
PX SSM3J36MFV TOSHIBA - VESM(1.2 x 1.2)
(2-1L1B)		 3 P-ch MOS FET for power management switch applications.
PY SSM3J56MFV TOSHIBA - VESM(1.2 x 1.2)
(2-1L1B)		 3 P-ch MOS FET for load switching application.
PZ SSM3J35FS TOSHIBA - SSM(1.6 x 1.6)
(2-2H1B)		 3 P-ch MOS FET for high speed switching.
PZ SSM3J35MFV TOSHIBA - VESM(1.2 x 1.2)
(2-1L1B)		 3 P-ch MOS FET for high speed switching.
PZ SSM3J35MFV TOSHIBA - VESM(1.2 x 1.2)
(2-1L1B)		 3 P-ch MOS FET for high speed switching.
P*|O
or
(P|O)		 2SC2884
Grade O(100~200)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for low power amp/audio frequency amp.
Pb free.
Complementary to 2SA1204.
P*O
or
(PO)		 2SC2884
Grade O(100~200)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for low frequency amp.
Complementary to 2SA1204.
P*|Y
or
(P|Y)		 2SC2884
Grade Y(160~320)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for low power amp/audio frequency amp.
Pb free.
Complementary to 2SA1204.
P*Y
or
(PY)		 2SC2884
Grade Y(160~320)		 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(2-5K1A)		 3(4) Bipolar NPN transistor for low frequency amp.
Complementary to 2SA1204.
QO 2SC2714
Grade O(70~140)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar NPN transistor for FM band high frequency amp.
QR 2SC2714
Grade R(40~80)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar NPN transistor for FM band high frequency amp.
QY 2SC2714
Grade Y(100~200)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar NPN transistor for FM band high frequency amp.
R9 1SS392 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(1-3G1F)		 3 Schottky barrier diode for low voltage high speed switching.
R9 1SS393 TOSHIBA SC-70
SOT-323		 USM(2.0 x 2.1)
(1-2P1B)		 3 Schottky barrier diode for low voltage high speed switching.
RD
or
R|D		 U1DL49 TOSHIBA SC-62
SOT-89		 PW-Mini(4.6 x 4.2)
(3-5E1A)		 3(4) High efficiency rectifier(HED) for switching power supply application.
RO 2SC2715
Grade O(70~140)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar NPN transistor for high frequency AM/FM convert.
Discontinued.
RR 2SC2715
Grade R(40~80)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar NPN transistor for high frequency AM/FM convert.
Discontinued.
RY 2SC2715
Grade Y(120~240)		 TOSHIBA SC-59
TO-236MOD		 S-Mini(2.9 x 2.5)
(2-3F1A)		 3 Bipolar NPN transistor for high frequency AM/FM convert.
Discontinued.
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最終更新：2022年08月08日 15:54